Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure
Less formal than a class lecture, a seminar allows for small groups to meet and discuss academic topics or required reading, as well as set goals for research and continuing investigation. The following seminar was conducted on Thursday 20-06-2023 at 10:00 AM by Dr. Yasir Hashim Naif, Lecturer, Department of Computer Engineering Synopsis (Abstract) about the seminar: The impact of working temperature on the electrical properties of FinFETs is discussed in this research. The properties of FinFET have been produced using the simulation tool Multi-Gate Field Effect Transistors (MuGFET) under a range of temperature from (T=275 Ko) to (T=375 K"). [...]