Less formal than a class lecture, a seminar allows for small groups to meet and discuss academic topics or required reading, as well as set goals for research and continuing investigation.
The following seminar was conducted on Thursday 20-06-2023 at 10:00 AM by Dr. Yasir Hashim Naif, Lecturer, Department of Computer Engineering
Synopsis (Abstract) about the seminar:
The impact of working temperature on the electrical properties of FinFETs is discussed in this research. The properties of FinFET have been produced using the simulation tool Multi-Gate Field Effect Transistors (MuGFET) under a range of temperature from (T=275 Ko) to (T=375 K”). First simulations are done to determine the current-voltage characteristics for N- and Pchannel FinFET structures with this temperature range and fixed channel Fin parameters, As a temperature nano-sensor, the greater AI at the applied voltage with a range of 0 to 1 V at a diode mode connection has been taken into consideration for the FinFET’s optimum temperature sensitivity. The maximum temperature sensitivity and AI for both N- and Pchannel FinFETs that happen at Vd=Vg=0.6 V and N-channel current are around L,36 times that of a P-channel FinFET.
