{"id":7008,"date":"2023-06-20T16:33:34","date_gmt":"2023-06-20T13:33:34","guid":{"rendered":"http:\/\/engineering.tiu.edu.iq\/computer\/?p=7008"},"modified":"2023-06-25T12:57:01","modified_gmt":"2023-06-25T09:57:01","slug":"temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure","status":"publish","type":"post","link":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/","title":{"rendered":"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure"},"content":{"rendered":"

Less formal than a class lecture, a seminar allows for small groups to meet and discuss academic topics or required reading, as well as set goals for research and continuing investigation.<\/p>\n

The following seminar was conducted on Thursday 20-06-2023 at 10:00 AM by Dr. Yasir Hashim Naif, Lecturer, Department of Computer Engineering<\/p>\n

Synopsis (Abstract) about the seminar:<\/p>\n

The impact of working temperature on the electrical properties of FinFETs is discussed in this research. The properties of FinFET have been produced using the simulation tool Multi-Gate Field Effect Transistors (MuGFET) under a range of temperature from (T=275 Ko) to (T=375 K”). First simulations are done to determine the current-voltage characteristics for N- and Pchannel FinFET structures with this temperature range and fixed channel Fin parameters, As a temperature nano-sensor, the greater AI at the applied voltage with a range of 0 to 1 V at a diode mode connection has been taken into consideration for the FinFET’s optimum temperature sensitivity. The maximum temperature sensitivity and AI for both N- and Pchannel FinFETs that happen at Vd=Vg=0.6 V and N-channel current are around L,36 times that of a P-channel FinFET.<\/p>\n<\/div>

\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
<\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
<\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
<\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
\"\"<\/a><\/div><\/div>
<\/div><\/div><\/div><\/div><\/div><\/div><\/div>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":57,"featured_media":7062,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"wds_primary_category":0,"footnotes":""},"categories":[43],"tags":[],"class_list":["post-7008","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-seminars"],"yoast_head":"\nSeminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure - Computer Engineering Department<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure - Computer Engineering Department\" \/>\n<meta property=\"og:url\" content=\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\" \/>\n<meta property=\"og:site_name\" content=\"Computer Engineering Department\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/Tishkuniversity\/?ref=bookmarks\" \/>\n<meta property=\"article:published_time\" content=\"2023-06-20T13:33:34+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2023-06-25T09:57:01+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png\" \/>\n\t<meta property=\"og:image:width\" content=\"1920\" \/>\n\t<meta property=\"og:image:height\" content=\"1080\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"Web Admin\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@tishkuni\" \/>\n<meta name=\"twitter:site\" content=\"@tishkuni\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Web Admin\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"3 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\"},\"author\":{\"name\":\"Web Admin\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/person\/6950fcafea2cc5467e5114842fceb89e\"},\"headline\":\"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure\",\"datePublished\":\"2023-06-20T13:33:34+00:00\",\"dateModified\":\"2023-06-25T09:57:01+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\"},\"wordCount\":998,\"publisher\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#organization\"},\"image\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage\"},\"thumbnailUrl\":\"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png\",\"articleSection\":[\"Seminars\"],\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\",\"url\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\",\"name\":\"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure - Computer Engineering Department\",\"isPartOf\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage\"},\"image\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage\"},\"thumbnailUrl\":\"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png\",\"datePublished\":\"2023-06-20T13:33:34+00:00\",\"dateModified\":\"2023-06-25T09:57:01+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage\",\"url\":\"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png\",\"contentUrl\":\"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png\",\"width\":1920,\"height\":1080},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/engineering.tiu.edu.iq\/computer\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#website\",\"url\":\"https:\/\/engineering.tiu.edu.iq\/computer\/\",\"name\":\"TIU\",\"description\":\"The Future is Here\",\"publisher\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/engineering.tiu.edu.iq\/computer\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#organization\",\"name\":\"TIU\",\"url\":\"https:\/\/engineering.tiu.edu.iq\/computer\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/logo\/image\/\",\"url\":\"\",\"contentUrl\":\"\",\"caption\":\"TIU\"},\"image\":{\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/logo\/image\/\"},\"sameAs\":[\"https:\/\/www.facebook.com\/Tishkuniversity\/?ref=bookmarks\",\"https:\/\/x.com\/tishkuni\"]},{\"@type\":\"Person\",\"@id\":\"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/person\/6950fcafea2cc5467e5114842fceb89e\",\"name\":\"Web Admin\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\/\/secure.gravatar.com\/avatar\/3a47b9231d151155cd33bd25d059ecb52841805eb3d30eec2e06be3ffe6ee961?s=96&d=mm&r=g\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/3a47b9231d151155cd33bd25d059ecb52841805eb3d30eec2e06be3ffe6ee961?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/3a47b9231d151155cd33bd25d059ecb52841805eb3d30eec2e06be3ffe6ee961?s=96&d=mm&r=g\",\"caption\":\"Web Admin\"},\"url\":\"https:\/\/engineering.tiu.edu.iq\/computer\/author\/web_admin\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure - Computer Engineering Department","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/","og_locale":"en_US","og_type":"article","og_title":"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure - Computer Engineering Department","og_url":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/","og_site_name":"Computer Engineering Department","article_publisher":"https:\/\/www.facebook.com\/Tishkuniversity\/?ref=bookmarks","article_published_time":"2023-06-20T13:33:34+00:00","article_modified_time":"2023-06-25T09:57:01+00:00","og_image":[{"width":1920,"height":1080,"url":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png","type":"image\/png"}],"author":"Web Admin","twitter_card":"summary_large_image","twitter_creator":"@tishkuni","twitter_site":"@tishkuni","twitter_misc":{"Written by":"Web Admin","Est. reading time":"3 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#article","isPartOf":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/"},"author":{"name":"Web Admin","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/person\/6950fcafea2cc5467e5114842fceb89e"},"headline":"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure","datePublished":"2023-06-20T13:33:34+00:00","dateModified":"2023-06-25T09:57:01+00:00","mainEntityOfPage":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/"},"wordCount":998,"publisher":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#organization"},"image":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage"},"thumbnailUrl":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png","articleSection":["Seminars"],"inLanguage":"en-US"},{"@type":"WebPage","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/","url":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/","name":"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure - Computer Engineering Department","isPartOf":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#website"},"primaryImageOfPage":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage"},"image":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage"},"thumbnailUrl":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png","datePublished":"2023-06-20T13:33:34+00:00","dateModified":"2023-06-25T09:57:01+00:00","breadcrumb":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/"]}]},{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#primaryimage","url":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png","contentUrl":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-content\/uploads\/2022\/12\/web-posts-1.png","width":1920,"height":1080},{"@type":"BreadcrumbList","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/temprature-characteristics-of-10nm-n-and-p-channel-si-finfet-structure\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/engineering.tiu.edu.iq\/computer\/"},{"@type":"ListItem","position":2,"name":"Seminar: Temprature Characteristics of 10nm N- and P-Channel Si-FinFET Structure"}]},{"@type":"WebSite","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#website","url":"https:\/\/engineering.tiu.edu.iq\/computer\/","name":"TIU","description":"The Future is Here","publisher":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/engineering.tiu.edu.iq\/computer\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#organization","name":"TIU","url":"https:\/\/engineering.tiu.edu.iq\/computer\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/logo\/image\/","url":"","contentUrl":"","caption":"TIU"},"image":{"@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/logo\/image\/"},"sameAs":["https:\/\/www.facebook.com\/Tishkuniversity\/?ref=bookmarks","https:\/\/x.com\/tishkuni"]},{"@type":"Person","@id":"https:\/\/engineering.tiu.edu.iq\/computer\/#\/schema\/person\/6950fcafea2cc5467e5114842fceb89e","name":"Web Admin","image":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/secure.gravatar.com\/avatar\/3a47b9231d151155cd33bd25d059ecb52841805eb3d30eec2e06be3ffe6ee961?s=96&d=mm&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/3a47b9231d151155cd33bd25d059ecb52841805eb3d30eec2e06be3ffe6ee961?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/3a47b9231d151155cd33bd25d059ecb52841805eb3d30eec2e06be3ffe6ee961?s=96&d=mm&r=g","caption":"Web Admin"},"url":"https:\/\/engineering.tiu.edu.iq\/computer\/author\/web_admin\/"}]}},"_links":{"self":[{"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/posts\/7008","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/users\/57"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/comments?post=7008"}],"version-history":[{"count":6,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/posts\/7008\/revisions"}],"predecessor-version":[{"id":7066,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/posts\/7008\/revisions\/7066"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/media\/7062"}],"wp:attachment":[{"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/media?parent=7008"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/categories?post=7008"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.tiu.edu.iq\/computer\/wp-json\/wp\/v2\/tags?post=7008"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}